Micro and Smart Devices and Systems by K. J. Vinoy, G. K. Ananthasuresh, Rudra Pratap, S. B.

By K. J. Vinoy, G. K. Ananthasuresh, Rudra Pratap, S. B. Krupanidhi

The publication provides state-of-the-art learn within the rising fields of micro, nano and clever units and structures from specialists operating in those fields during the last decade. lots of the individuals have equipped units or structures or constructed procedures or algorithms in those parts. The publication is a special number of chapters from diverse parts with a standard subject matter and is immensely valuable to educational researchers and practitioners within the who paintings during this field.

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We also determined the effect of the diaphragm lateral length L on the position of the peak stress (Xp), with a fixed diaphragm thickness, h = 100 lm, considering both DRIE etched and KOH etched diaphragms with crosssection shown in Fig. 1b, c. The results obtained from all the simulation studies involving various thicknesses and L/h ratios are shown in Fig. 4, where Xp is plotted versus L/h ratio. It can be seen that in general, Xp is positive when the aspect ratio is below eight indicating that the peak stress lies outside the diaphragm portion for these cases.

These different levels of tests generally require corresponding characterization equipment although there are multipurpose tools which can be effectively employed at more than one level. A few most important of these are explored in the rest of this section starting with visual characterization using advanced imaging techniques. Figure 6 shows a scanning electron microscope image of the beam-mass system of the MEMS piezoresistive accelerometer that has been used as reference in this chapter as well as its complete wafer-encapsulated implementation.

976 Fig. 4 Variation of the Location Xp (of peak stress with respect to the diaphragm edge) versus the diaphragm aspect ratio (L/h) for the DRIE etched diaphragms having, respectively, h = 20, 100, 200 lm, and for the KOH etched diaphragms with h = 100 lm 8 K. N. Bhat et al. Fig. 3 GPa at 400 bar, so that the maximum stress is well below 1 Gpa even at 1,000 bar. Once again the maximum stress versus pressure was determined to be linear over the pressure range 0–400 bar. The resistors of the Wheatstone bridge of the sensors were placed outside the diaphragm at a distance of 77 lm from the diaphragm edge.

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